Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate

ABSTRACT

A method for fabricating a floating gate memory device comprises using a buried diffusion oxide that is below the floating gate thereby producing an increased step height between the floating gate and the buried diffusion oxide. The increased step height can produce a higher GCR, while still allowing decreased cell size using a virtual ground array design.

BACKGROUND

1. Field of the Invention

The embodiments described herein are directed to methods for fabricatingnon-volatile memory devices, and more particularly to methods forfabricating floating-gate memory devices using virtual ground arrays.

2. Background of the Invention

FIG. 1 is a schematic representation of a conventional floating gatememory cell 100. Memory cell 100 comprises a substrate 102 withdiffusion regions 104 and 106 formed therein. The diffusion regionscorrespond to the source and drain of FET-type device. According to oneexample, substrate 102 can be a P-type substrate and diffusion regions104 and 106 can be N-type diffusion regions. In other embodiments, cell100 can comprise an N-type substrate 102 with P-type diffusion regions104 and 106. Although it will be understood that a P-type substrate isgenerally preferred.

Cell 100 further comprises a gate dielectric layer, sometimes referredto as a tunnel dielectric layer 108 formed over substrate 102 betweendiffusion regions 104 and 106. A floating gate 110 is then formed overgate dielectric 108. Floating gate 110 is typically formed from apolysilicon. An inter—polysilicon (poly) dielectric layer 112 thenseparates floating gate 110 from a control gate 114. Control gate 114 isalso typically formed from polysilicon. Inter-poly dielectric layer 112can be formed from, e.g., a silicon dioxide (SiO₂) material. In otherembodiments, inter-poly dielectric 110 can comprise a multi-layerstructure such as an Oxide-Nitride-Oxide (ONO) structure.

In operation, a high voltage is applied to control gate 114 in order toprogram cell 100. This voltage is coupled with floating gate 110 via acontrol gate capacitance (C_(CG)). The coupled voltage causes aninversion channel to be formed in the upper layer of substrate 102between diffusion regions 104 and 106. Voltages are then applied todiffusion regions 104 and 106 so as to create a large lateral electricfield that will cause carriers to flow through the channel, e.g., fromone diffusion region towards the other.

The voltage coupled with floating gate 110 will create an electric fieldsufficient to cause some of the carriers to tunnel through gatedielectric 108 into floating gate 110. In other words, the voltagecoupled with floating gate 110 needs to be capable of producing anelectric field that can supply the carriers with enough energy to allowthem to overcome the barrier height of gate dielectric 108. Accordingly,as mentioned above, sufficient coupling between control gate 114 andfloating gate 110 is required in order to ensure that an adequate fieldis present to induce carriers to pass through gate dielectric 108 ontofloating gate 110.

It is well known to use virtual ground array designs in order to reducethe cell size for floating gate memory cells and non-volatile memoryproducts, such as flash memory products. Smaller cell sizes, however,often require smaller buried diffusion sizes, which are not necessarilycompatible with conventional processing techniques.

For example, one problem that can occur as a result of the reducedburied diffusion sizes with conventional fabrication techniques is areduced gate coupling ratio (GCR) between the control gate and floatinggate. Sufficient coupling is needed in order to ensure that an adequatefield is present in the memory cell to induce carriers to pass throughthe tunnel oxide layer into the floating gate.

As is understood, the GCR is a function of the C_(GC) as well as theSource Capacitance (C_(S)), Bulk Capacitance (C_(B)), and DrainCapacitance (C_(D)) illustrated in FIG. 1. The relationship is definedas:GCR=C _(CG)/(C _(S) +C _(B) +C _(D) +C _(CG))

Accordingly, the GCR can be increased by increasing C_(CG), or bydecreasing the Source Capacitance (C_(S)) or Drain Capacitance (C_(D)).Thus, by increasing the distance between floating gate 110 and burieddiffusion regions 104 and 106, source and drain capacitances (C_(S),C_(D)) can be decreased. As a result, the gate coupling ratio (GCR) ofthe memory device can be improved. Accordingly, it is important tomaintain adequate GCR in virtual ground arrays, despite the smallerburied diffusion sizes.

SUMMARY

A method for fabricating a floating gate memory device comprises using aburied diffusion oxide that is below the floating gate thereby producingan increased step height between the floating gate and the burieddiffusion oxide. The increased step height can produce a higher GCR,while still allowing decreased cell size using a virtual ground arraydesign.

These and other features, aspects, and embodiments of the invention aredescribed below in the section entitled “Detailed Description.”

BRIEF DESCRIPTION OF THE DRAWINGS

Features, aspects, and embodiments of the inventions are described inconjunction with the attached drawings, in which:

FIG. 1 is a schematic diagram illustrating a cross-sectional view of aconventional floating gate memory cell;

FIG. 2 is a schematic diagram illustrating a cross-sectional view of afloating gate memory device fabricated using a conventional fabricationprocess;

FIG. 3 is a schematic diagram illustrating a cross-sectional view of afloating gate memory device fabricated using a conventional fabricationprocess that does not include a fourth poly step;

FIG. 4 is a schematic diagram illustrating a cross-sectional view of afloating gate memory cell fabricated in accordance with one embodiment;and

FIGS. 5A-5G are schematic diagrams illustrating an exemplary process forfabricating the floating gate memory device of FIG. 4 in accordance withone embodiment.

DETAILED DESCRIPTION

In the methods described below, an increased GCR in a scaled virtualground cell is provided by fabricating the cell in order to produce alarge step height between the floating gate and the buried diffusionoxide. As a result, a larger overlay region can be maintained betweenthe control gate and floating gate, which increases the GCR.

FIG. 2 is a schematic diagram illustrating a cross-sectional view of aconventional floating gate memory device fabricated using a conventionalprocess. As can be seen, device 200 comprises a substrate 202 withdiffusion regions 216 implanted therein. A dielectric layer 204 (i.e., atunnel oxide layer) is formed on substrate 202. Floating gates for thevarious cells in device 200 are then formed from polysilicon layers 206and 208. These layers can be referred to as the first and fourth polylayers respectively. Buried diffusion oxides 214 are formed overdiffusion region 216 and Oxide-Nitride-Oxide (ONO) layer 210, i.e., aninter-poly dielectric, is then formed over fourth poly layer 208. Itwill be understood that buried diffusion oxides 214 correspond withburied diffusion lines that run through the array.

A control gate polysilicon layer 212, i.e., the second poly layer, isthen formed on ONO layer 210. As mentioned, as buried diffusion regions216 decrease in size, the coupling between the control gate and thefloating gate is reduced. FIG. 3 is a diagram illustrating a floatinggate memory device constructed using a conventional process that doesnot include fourth poly layer 208; however, it can be shown that simplyeliminating fourth poly layer 208 is not sufficient to provide adequateGCR to make an effective memory device.

Accordingly, FIG. 4 is a diagram illustrating a floating gate memorydevice 400 fabricated in accordance with the embodiments describedherein. As can be seen, device 400 comprises buried diffusion oxides420, wherein the step height (h) between the top of ONO layer 422 abovefloating gate layer 406 and the top of ONO layer 422 above burieddiffusion oxide 420 is larger than in FIGS. 2 and 3 where the top offloating gate 206 is below the top of buried diffusion oxide 214. InFIG. 4, polysilicon layer 424, i.e., the second poly layer, overlays ONOlayer 422, i.e., the inter-poly dielectric, which is formed on top offloating gates 406. The increased step height (h) produces a greater GCRdue to the larger overlay between the control gate and floating gatethat can then be achieved.

It should be noted that while an ONO layer 422 is illustrated in theexample of FIG. 4, layer 422 can be seen as simply a dielectric layer.Accordingly, the example of FIG. 4 should not be seen as limiting thedevices and methods described herein to the use of a particular type ofdielectric layer, e.g., an ONO layer 422, and it will be understood thatany suitable dielectric layer can be used.

FIGS. 5A-5G are diagrams illustrating an exemplary process forfabricating a device 400 in accordance with one embodiment. First, inFIG. 5A, a dielectric layer 504, i.e., tunnel oxide, is formed onsubstrate 502. For example, dielectric layer 504 may comprise silicondioxide (SiO₂). After this, a first poly layer 506 is deposited. Firstpoly layer 506 can be anywhere from approximately 600 Å to 1400 Å. Asilicon nitride layer 508 can then be deposited on first poly layer 506.

As illustrated in FIG. 5B, a photoresist 510 can then be used to patternsilicon nitride layer 508, first poly layer 506, and dielectric layer504. Patterned layers 506, 508, and 504 can then be etched asillustrated in FIG. 5B. The etching process should produce a slightrecess in substrate 502 at the bottom of etched regions 514 createdduring the etching process. Thus, for example, the etching process canbe similar to that used for Shallow Trench Isolation (STI) structureformation; however, it will be understood that the recesses created willbe more shallow than the trenches produced in STI formation.

Diffusion regions 512 can then be implanted and heat driven in substrate502. For example, if substrate 502 is a P-type substrate, then N+diffusion regions 512 can be implanted in the P-type substrate 502.Since silicon nitride layer 508 and first poly layer 506 act as animplant mask, this process is self-aligned.

Referring to FIG. 5C, a dielectric layer 516 is then formed oversubstrate 502 as illustrated. Dielectric layer 516 can be, for example,a SiO₂ layer and can be formed using High Density Plasma (HDP)—CVD.Referring to FIG. 5D, a portion of dielectric layer 516 is removed toexpose the remaining portions of silicon nitride layer 508 and part ofthe remaining portions of polysilicon layer 506. For example, aconventional wet etching, such as HF or BOE solution (i.e., isotropic),process can be used to remove a portion of dielectric layer 516.Removing the right amount of dielectric layer 516 can be achieved byhaving a high etching selectivity ratio between dielectric layer 516 andsilicon nitride layer 508.

The etching process also produces oxide regions 520, which can form theburied diffusion oxides for the device.

Referring to FIG. 5E, the remaining portions of silicon nitride layer508 can then be removed, removing portions 518 of dielectric layer 516in the process. For example, hot phosphoric acid can be used to removethe remaining portions of silicon nitride layer 508. Portions 518 ofdielectric layer 516 will automatically be removed during the removal ofthe remaining portions of silicon nitride layer 508 because portions 518are disconnected from the rest of dielectric layer 516.

ONO layer 522 can then be formed over substrate 502 as illustrated inFIG. 5F. It will be understood that formation of an ONO layer 522comprises the deposition/formation of a plurality of layers in sequence.These layers typically comprise an oxide layer, a nitride layer, such asa silicon nitride layer (SiN), and another oxide layer. Although, asmentioned above, certain embodiments can make use of an alternativeinter-dielectric layer, in which case formation of layer 522 comprisesformation of the alternative inter-dielectric material.

A polysilicon layer 524 can then be formed over ONO layer 522 asillustrated in FIG. 5G. Polysilicon layer 524 is the second poly layerand can be formed, e.g., using CVD.

Device processing can continue in accordance with conventional processtechniques after the steps illustrated in FIG. 5G. These steps caninclude the patterning and etching of the second poly layer, formationof a third poly layer, and patterning and etching of the third polylayer. Conventional Back End of the Line (BEOL) processing techniquescan then be used to form the required metal interconnect layers.

While certain embodiments of the inventions have been described above,it will be understood that the embodiments described are by way ofexample only. Accordingly, the inventions should not be limited based onthe described embodiments. Rather, the scope of the inventions describedherein should only be limited in light of the claims that follow whentaken in conjunction with the above description and accompanyingdrawings.

1. A floating gate memory device, comprising: a substrate comprising aburied diffusion region and a shallow recess within the buried diffusionregion; a first dielectric layer formed directly on at least a portionof the buried diffusion region; a buried diffusion oxide formed in theshallow recess adjacent to the first dielectric layer; a floating gateformed directly on the first dielectric layer and not on the burieddiffusion oxide, wherein the top of the floating gate is higher than thetop of the buried diffusion oxide and the bottom of the floating gate ishigher than the top of the buried diffusion region; and a seconddielectric layer formed over the floating gate and the buried diffusionoxide.
 2. The floating gate memory device of claim 1, further comprisinga control gate formed over the floating gate and the second dielectriclayer.
 3. The floating gate memory device of claim 2, wherein thefloating gate and control gate are formed from patterned polysiliconlayers.
 4. The floating gate memory device of claim 1, wherein thefloating gate has a thickness in the range of approximately 600 Å to1400 Å.
 5. The floating gate memory device of claim 1, furthercomprising an increased step height between the top of the seconddielectric layer above the floating gate and the top of the seconddielectric layer above the buried diffusion oxide.
 6. The floating gatememory device of claim 5, wherein the step height between the top of thesecond dielectric layer above the floating gate and the top of thesecond dielectric layer above the buried diffusion oxide is in the rangeof approximately 300 Å to 800 Å.
 7. The floating gate memory device ofclaim 1, wherein the second dielectric layer is an oxide-nitride-oxide(ONO) dielectric layer.
 8. The floating gate memory device of claim 1,wherein the top of the buried diffusion oxide is higher than the top ofthe first dielectric layer.
 9. A floating gate memory device,comprising: a substrate comprising first and second buried diffusionregions and corresponding first and second shallow recesses within thefirst and second buried diffusion regions; a first dielectric layerformed directly on at least a portion of both the first and secondburied diffusion regions; first and second buried diffusion oxidesformed in the corresponding first and second shallow recesses adjacentto and on opposing ends of the first dielectric layer; a floating gateformed directly on the first dielectric layer and not on the first andsecond buried diffusion oxides, wherein the top of the floating gate ishigher than the top of the first and second buried diffusion oxides andthe bottom of the floating gate is higher than the top of the first andsecond buried diffusion regions; and a second dielectric layer formedover the floating gate and the first and second buried diffusion oxides.10. The floating gate memory device of claim 9, further comprising acontrol gate formed over the floating gate and the second dielectriclayer.
 11. The floating gate memory device of claim 10, wherein thefloating gate and control gate are formed from patterned polysiliconlayers.
 12. The floating gate memory device of claim 9, wherein thefloating gate has a thickness in the range of approximately 600 Å to1400 Å.
 13. The floating gate memory device of claim 9, furthercomprising an increased step height between the top of the seconddielectric layer above the floating gate and the top of the seconddielectric layer above the first and second buried diffusion oxides. 14.The floating gate memory device of claim 13, wherein the step heightbetween the top of the second dielectric layer above the floating gateand the top of the second dielectric layer above the first and secondburied diffusion oxide is in the range of approximately 300 Å to 800 Å.15. The floating gate memory device of claim 9, wherein the seconddielectric layer is an oxide-nitride-oxide (ONO) dielectric layer. 16.The floating gate memory device of claim 9, wherein the tops of thefirst and second buried diffusion oxides are higher than the top of thefirst dielectric layer.
 17. A floating gate memory device, comprising: asubstrate comprising a buried diffusion region and a shallow recesswithin the buried diffusion region; a first dielectric layer formeddirectly on at least a portion of the buried diffusion region; a burieddiffusion oxide formed in the shallow recess adjacent to the firstdielectric layer, wherein the top of the buried diffusion oxide ishigher than the top of the first dielectric layer; a floating gateformed directly on the first dielectric layer and not on the burieddiffusion oxide, wherein the top of the floating gate is higher than thetop of the buried diffusion oxide and the bottom of the floating gate ishigher than the top of the buried diffusion region; a second dielectriclayer formed over the floating gate and the buried diffusion oxide; anda control gate formed on the second dielectric layer, over the floatinggate and the second dielectric layer.
 18. The floating gate memorydevice of claim 17, wherein the floating gate and control gate areformed from patterned polysilicon layers.
 19. The floating gate memorydevice of claim 17, further comprising an increased step height betweenthe top of the second dielectric layer above the floating gate and thetop of the second dielectric layer above the buried diffusion oxide. 20.The floating gate memory device of claim 17, wherein the seconddielectric layer is an oxide-nitride-oxide (ONO) dielectric layer.